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Chemical Vapor Deposition (CVD)

Technical Data

Chemical Vapor Deposition (CVD)

Company: Sentech
Model: SI 500 D PE-Deposition
Application: Thin-film deposition, Encapsulation, Coating
Process type: Plasma deposition CVD
Material: SiO2, SiNx, SiONx, and a-Si films
Substrate type: Wafers up to 200 mm diameter
parts loaded on carriers
Substrate temperature range: Room temperature up to 350 °C
Plasma option: Type: Planar Triple Spiral Antenna (PTSA) ICP plasma source
Control system: PLC control with PC user interface
Integration: Glove box
Load-lock