Atomic Layer Deposition (ALD)
Technical Data | Atomic Layer Deposition (ALD) |
| Company: | Beneq |
| Model: | TFS200 |
| Application: | Thin-film deposition, encapsulation |
| Process type: | Thermal ALD Plasma-Enhanced ALD Face-up and Face-down |
| Material: | Al2O3, TiO2 |
| Substrate type: | Up to 200 mm wafer Up to 200 x 200 mm² 3D parts |
| Substrate temperature range: | 25 - 350 °C |
| Liquid sources: | Up to 4 |
| Gas lines: | Up to 8 |
| Plasma option (PEALD): | Power: 300 W, Type: Capacitively coupled plasma (CCP) |
| Control system: | PLC control with PC user interface |
| Integration: | Glove box Load-Lock Cluster |