Atomic Force Microscopy (AFM) - Asylum
Technical Data | Atomic Force Microscopy (AFM) |
| Company: | Asylum Research (Oxford Instruments) |
| Model: | MFP-3D |
| Max scan field: | 90 µm x 90 µm x 15 µm |
| Positioning camera: | Field of view: 2200 µm x 1600 µm
Resolution: 3 µm |
| XY-Stage: | XY-Table |
| XY-Positioning: | micrometer screw |
| Laser wavelength: | Super luminescent diode: 860 nm |
Available Modes
| Mode | Meaning | Investigated Property |
| Contact | Contact | Topography (Elast. via phase, frict. via lateral) |
| AC | Non-Contact | Topography |
| Tapping | Semi-Contact Tapping | Topography (Elasticity via Phase) |
| Current imaging (C-AFM) | Conductivity measurement | el. Conductivity |
| I/V Spectroscopy | Current Voltage dependance | el. Conductivity |
| TDDB | Time Dependend Dielectric Breakdown | el. Insulation |
| SKPM | Surface Kelvin Probe Microscopy | Surface Potential |
| MFM | Magnetic Force Microscopy | Magnetism |
| EFM | Electrostatic Force Microscopy | Electrostatic distribution |
| Force spectroscopy | Force-Distance curve | Elasticity |
| Force mapping | Force-Distance curve for matrix | Elasticity |
| Dual AC | AC in first and second order resonance | Several (i.e. short- vs long-range forces) |
| DART | Dual-AC Resonance Tracking | Several (i.e. Ferroelectricity) |
| loss tangent imaging | Dissipation of energy of tip-sample interaction | Dielectric constant |
| LFM | Lateral Force Microscopy | Friction |
| PFM | Piezoresponse Force Microscopy | Ferroelectricity |
| Nanolithography | Change of sample properties | - |
| Nanomanipulation | Sample manipulation | - |
Available expansion modules
| Module name | Application | Specifics |
| Closed Fluid Cell | Analysis in fluid/protective gas environment | |
| Cooler Heater | Temperature dependend Measurement | Range: -15°C - 120°C |
| Variable Field Module | Analysis under external tangential magnetic field | Range: -7000 G - 7000 G (10000 G = 1 T) |
| Probe Station | in-situ Two- and Three-Point electrical measurements | |
| Nanoscale TDDB | Time Dependend Dielectric Breakdown | Range: -150 V - +150 V |
